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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,775 pcs
|
1775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| BFR Free | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter On Voltage | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Halogen Free | |
| IC (Maximum @ Continuous) | |
| Junction and Storage Temperature | |
| Mounting Type | |
| PD (Maximum @ Alumina Substrate, TA=25 °C) | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| VCE(sat) (Maximum @ IC = 50 mAdc, IB = 0.5 mAdc) | |
| VCE(sat) (Maximum @ IC = 500 mAdc, IB = 0.5 mAdc) | |
| VCEO (Maximum) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC = 10 mAdc, VCE = 5.0 Vdc) | |
| hFE (Minimum @ IC = 100 mAdc, VCE = 5.0 Vdc) | |
| hFE (Minimum @ IC = 500 mAdc, VCE = 5.0 Vdc) | |
| pd (Maximum @ FR -5 Board, TA=25 °C) |
The SMMBT6427LT1G from ON Semiconductor is a silicon NPN Darlington transistor packaged in a compact SOT-23-3 (TO-236) surface mount package. This device is suitable for applications requiring high current gain, featuring a minimum DC current gain (hFE) of 20,000 at 100mA and 5V.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 500mA. The transistor exhibits a low collector-emitter saturation voltage (VCE(sat)) of 1.5V at 500mA collector current and 0.5mA base current. It also has a base-emitter saturation voltage (VBE(sat)) of 2.0V maximum under the same conditions.
This component is designed for surface mounting, making it ideal for space-constrained electronic designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, aligning with modern environmental standards. The device is also AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.
Thermal considerations include a total device dissipation of 225mW on an FR-5 board at 25°C. The junction and storage temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SMMBT6427LT1G is 40 Vdc.
The continuous collector current (IC) for the SMMBT6427LT1G is 500 mAdc.
The SMMBT6427LT1G is supplied in a SOT-23-3 (TO-236) package.
The minimum DC current gain (hFE) is 20,000 at 100mA collector current and 5V collector-emitter voltage.
The SMMBT6427LT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SMMBT6427LT1G is 1.