| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SMMBT5401LT1 from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. This component is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage of 150V and a continuous collector current of 500mA. It offers a minimum DC current gain (hFE) of 60 at 10mA and 5V, with a Vce saturation of 500mV at 5mA and 50mA. The transistor operates across a wide temperature range from -55°C to 150°C (TJ).
With a power dissipation rating of 300mW and a transition frequency of 300MHz, the SMMBT5401LT1 is a versatile component for signal amplification and switching tasks. It is specified as RoHS3 compliant, indicating adherence to environmental standards for material content.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 150V.
The maximum collector current is 500mA.
The SMMBT5401LT1 is available in a surface-mount SOT-23-3 package (TO-236-3, SC-59).
The operating junction temperature range is -55°C to 150°C.
The typical transition frequency (fT) is 300MHz.