SMMBT5089LT1G The ON Semiconductor SMMBT5089LT1G is an NPN bipolar junction transistor designed for surface mount applications. It offers a 25V collector-emitter voltage and 50mA continuous current.
Mfr Part #:

SMMBT5089LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SMMBT5089LT1G is an NPN bipolar junction transistor designed for surface mount applications. It offers a 25V collector-emitter voltage and 50mA continuous current.
Total Stock: 362,800 pcs
$ Price Range: $0.51

SMMBT5089LT1G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
362,800 pcs
362800 pcs On Request 1 On Request On Request On Request On Request On Request

SMMBT5089LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMMBT5089LT1G Description

Short technical summary and product information.

The SMMBT5089LT1G from ON Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 (TO-236) surface-mount package. This device is designed for applications requiring a 25V collector-emitter voltage and can handle a continuous collector current of up to 50mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 400 at 100µA collector current and 5V Vce. The Vce saturation voltage is a maximum of 500mV at 1mA base current and 10mA collector current. It operates at frequencies up to 50MHz.

 

With a maximum power dissipation of 300mW on an alumina substrate at 25°C, and an operating temperature range of -55°C to 150°C, this transistor is suitable for various electronic circuits. It is Pb-free and Halogen-free, with RoHS3 compliance.

 

The SOT-23-3 package is ideal for automated assembly processes, making it a versatile component for high-density circuit designs. The standard package quantity is 3,000 units per tape and reel.

SMMBT5089LT1G Quick Information

Product Type: NPN Transistor
Series: SMMBT5089
Canonical Name: SMMBT5089LT1G NPN Bipolar Transistor
Subcategory: Single

SMMBT5089LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SMMBT5089LT1G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBT5089LT1G Features

  • NPN silicon bipolar junction transistor.
  • Maximum collector-emitter voltage of 25V.
  • Continuous collector current of 50mA.
  • High DC current gain (hFE) up to 400.
  • Compact SOT-23-3 surface mount package.

SMMBT5089LT1G Applications

  • General purpose amplification circuits.
  • Low power switching applications.
  • Signal processing and conditioning.
  • Compact electronic device designs.

SMMBT5089LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMMBT5089LT1G?

25V.

What is the package type of the SMMBT5089LT1G?

SOT-23-3 (also known as TO-236).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the minimum DC current gain (hFE)?

400 at IC=100µA, VCE=5V.

What is the maximum VCE saturation voltage?

500mV at IB=1mA, IC=10mA.

What is the transition frequency?

50 MHz.

What is the maximum power dissipation?

300 mW on alumina substrate at 25°C ambient.

Home
Account

Categories