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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42,000 pcs
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42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMMBT3906WT1G from On Semiconductor is a PNP silicon transistor designed for general-purpose amplifier applications. It is housed in a compact SC-70, SOT-323 package, making it suitable for low-power surface mount designs.
This transistor offers a maximum collector-emitter voltage (Vceo) of -40V and a continuous collector current (Ic) of -200mA. It has a DC current gain (hFE) of 100 at 10mA and 1V, and a saturation voltage (Vce) of 400mV at 5mA and 50mA. The operating frequency is up to 250MHz.
The device operates within a temperature range of -55°C to 150°C (TJ) and has a total power dissipation of 150mW at 25°C. It is mounted using the surface mount technique.
Key features include its Pb-free and Halogen-free compliance, making it suitable for environmentally conscious designs. The SMMBT3906WT1G is AEC-Q101 qualified and PPAP capable when ordered with the 'S' prefix.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transistor is available in SC-70, SOT-323 package (SC-70-3 / SOT323).
The maximum continuous collector current is -200 mAdc.
The minimum DC current gain is 100 at 10mA collector current and 1V collector-emitter voltage.
The maximum total device dissipation is 150 mW at 25°C ambient temperature.
The junction and storage temperature range is -55°C to +150°C.
The transition frequency is 250 MHz.
The maximum collector-emitter saturation voltage is 400 mV at 5mA base current and 50mA collector current.