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SMMBT3906LT1G The On Semiconductor SMMBT3906LT1G is a PNP bipolar junction transistor designed for general-purpose applications. It features a 40V collector-emitter breakdown voltage and a 200mA continuous collector current.
Mfr Part #:

SMMBT3906LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMMBT3906LT1G is a PNP bipolar junction transistor designed for general-purpose applications. It features a 40V collector-emitter breakdown voltage and a 200mA continuous collector current.
✓ Total Stock: 85,875 pcs
$ Price Range: $0.51

SMMBT3906LT1G Available from 4 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMMBT3906LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMMBT3906LT1G Description

Short technical summary and product information.

The SMMBT3906LT1G from On Semiconductor is a PNP silicon bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 40V and a continuous collector current of up to 200mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 10mA and 1V, and a transition frequency of 250MHz. The device has a maximum power dissipation of 300mW and a Vce saturation voltage of 400mV at 5mA collector current and 50mA base current.

 

This transistor is housed in a compact SOT-23-3 surface-mount package, making it ideal for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ).

 

The SMMBT3906LT1G is Pb-free and halogen-free, complying with RoHS standards. Its 'S' prefix indicates suitability for automotive applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.

SMMBT3906LT1G Quick Information

Product Type: Bipolar Junction Transistor
Series: Automotive, AEC-Q101
Canonical Name: PNP Bipolar Junction Transistor
Subcategory: PNP

SMMBT3906LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMBT3906LT1G Estimated Pricing

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1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBT3906LT1G Features

  • PNP silicon bipolar junction transistor.
  • 40V collector-emitter breakdown voltage.
  • 200mA continuous collector current.
  • 250MHz transition frequency.
  • SOT-23-3 surface-mount package.

SMMBT3906LT1G Applications

  • Suitable for general-purpose applications.
  • Ideal for amplification circuits.
  • Used in switching applications.
  • Automotive AEC-Q101 qualified.

SMMBT3906LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the SMMBT3906LT1G?

The minimum collector-emitter breakdown voltage is -40V (40V absolute).

What is the operating temperature range?

-55°C to +150°C junction temperature.

What package is the SMMBT3906LT1G available in?

SOT-23-3 (TO-236, SC-59) surface mount package.

What is the DC current gain (hFE)?

Minimum hFE of 100 at 10mA collector current and 1V VCE.

What is the transition frequency?

250 MHz.

What is the collector-emitter saturation voltage?

Maximum 400mV at 5mA base current and 50mA collector current.

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