| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SMMBT3904LT3G from ON Semiconductor is a single NPN silicon bipolar junction transistor (BJT) housed in a compact SOT-23-3 (TO-236) surface-mount package. This general-purpose transistor is rated for a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA.
Key electrical characteristics include a DC current gain (hFE) of up to 300 at 10mA and 1V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 0.2V at 10mA and 1mA. It operates at frequencies up to 300MHz.
The device is designed for surface mounting and is suitable for a wide range of electronic circuits. Its operating temperature range is -55°C to 150°C.
This transistor is Pb-free, Halogen-free, and BFR-free, meeting RoHS compliance standards. It is also qualified for automotive applications under the 'S' prefix designation, indicating AEC-Q101 qualification and PPAP capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SMMBT3904LT3G is 40 Vdc.
The continuous collector current (IC) rating for the SMMBT3904LT3G is 200 mAdc.
The operating junction and storage temperature range is -55°C to 150°C.
The SMMBT3904LT3G is supplied in a SOT-23-3 (TO-236) surface mount package.
Yes, the SMMBT3904LT3G is RoHS3 compliant.
The minimum DC current gain (hFE) at 10mA and 1V is 100.
The maximum collector-emitter saturation voltage (VCE(sat)) at 10mA and 1mA is 0.2 Vdc.