SMMBT2907ALT1G The SMMBT2907ALT1G is a PNP bipolar transistor from On Semiconductor. It features a 60V collector-emitter voltage and 600mA continuous collector current, suitable for general-purpose applications.
Mfr Part #:

SMMBT2907ALT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMMBT2907ALT1G is a PNP bipolar transistor from On Semiconductor. It features a 60V collector-emitter voltage and 600mA continuous collector current, suitable for general-purpose applications.
Total Stock: 1,880,717 pcs
$ Price Range: $0.51

SMMBT2907ALT1G Available from 8 distributors

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SMMBT2907ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Power Dissipation (Maximum @ Heat Spreader or equivalent, TA = 25 °C)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ VCB = -50 Vdc, IE = 0)
current (Maximum @ VCB = -50 Vdc, IE = 0, TA = 125 °C)
current (Maximum @ VCE = -30 Vdc, VEB(off) = -0.5 Vdc)
voltage (Minimum @ IC = -1.0 mAdc, IB = 0)
voltage (Minimum @ IC = -10 /C 0109 Adc, IE = 0)
voltage (Minimum @ IE = -10 /C 0109 Adc, IC = 0)

SMMBT2907ALT1G Description

Short technical summary and product information.

The SMMBT2907ALT1G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose applications and offers a collector-emitter voltage of up to -60 Vdc and a continuous collector current of up to 600 mAdc. The transistor operates at frequencies up to 200MHz.

 

This device comes in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It has a maximum power dissipation of 300 mW and an operating temperature range of -55°C to 150°C. The SMMBT2907ALT1G is Pb-free and halogen-free, complying with RoHS standards.

 

Key electrical characteristics include a DC current gain (hFE) of 100 minimum at 150mA and 10V, and a Vce saturation of 1.6V maximum at 50mA and 500mA. Its small size and robust specifications make it a versatile component for various electronic circuits.

SMMBT2907ALT1G Quick Information

Product Type: Bipolar Transistor
Canonical Name: SMMBT2907ALT1G PNP Bipolar Transistor
Subcategory: PNP

SMMBT2907ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMBT2907ALT1G Estimated Pricing

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1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBT2907ALT1G Features

  • PNP bipolar junction transistor.
  • 60V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • 200MHz operating frequency.
  • SOT-23-3 surface-mount package.

SMMBT2907ALT1G Applications

  • General-purpose amplification circuits.
  • Low-power switching applications.
  • Signal processing tasks.
  • Compact electronic designs.

SMMBT2907ALT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the SMMBT2907ALT1G?

The minimum collector-emitter breakdown voltage is -60 Vdc.

What package is the SMMBT2907ALT1G available in?

Surface-mount SOT-23-3 (TO-236) package.

What is the operating temperature range of the SMMBT2907ALT1G?

-55°C to 150°C junction temperature.

What is the maximum collector current of the SMMBT2907ALT1G?

600 mA continuous, 1200 mA peak.

What is the DC current gain (hFE) of the SMMBT2907ALT1G?

Minimum 100 at 150 mA collector current and 10V collector-emitter voltage.

What is the transition frequency (fT) of the SMMBT2907ALT1G?

200 MHz.

What is the power dissipation rating of the SMMBT2907ALT1G?

300 mW on alumina substrate, 225 mW on FR-5 board, 350 mW with heat spreader.

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