SMMBT2369LT1G NPN bipolar transistor from ON Semiconductor, rated for 15V collector-emitter voltage and 200mA continuous current. Housed in a SOT-23-3 surface mount package.
Mfr Part #:

SMMBT2369LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor from ON Semiconductor, rated for 15V collector-emitter voltage and 200mA continuous current. Housed in a SOT-23-3 surface mount package.
Total Stock: 21,000 pcs
$ Price Range: $0.51

SMMBT2369LT1G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request 21+ On Request On Request

SMMBT2369LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0)
Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, VBE = 0)
Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IE = 10 /C 0109)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum) @ TA=25°C
SVHC Present
Supplier Device Package
Thermal Resistance (Nominal)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMMBT2369LT1G Description

Short technical summary and product information.

The SMMBT2369LT1G is an NPN bipolar junction transistor designed for general purpose switching and amplification. It features a maximum collector-emitter voltage of 15 Vdc and a continuous collector current of 200 mAdc. Power dissipation is rated at 225 mW on FR-5 board and 300 mW on alumina substrate at 25°C ambient temperature. The device has a junction and storage temperature range of -55°C to 150°C. DC current gain (hFE) is a minimum of 40 at 10 mA collector current and 1 V collector-emitter voltage. Collector-emitter saturation voltage is a maximum of 250 mV at 1 mA base current and 10 mA collector current. Breakdown voltages include a collector-emitter breakdown of 15 Vdc (IB=0) and 40 Vdc (VBE=0), collector-base breakdown of 40 Vdc, and emitter-base breakdown of 4.5 Vdc. Thermal resistance from junction to ambient is 556 °C/W on FR-5 board and 417 °C/W on alumina substrate. The transistor is supplied in a surface mount SOT-23-3 (TO-236) package and is lead-free and halogen-free per the datasheet.

SMMBT2369LT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: NPN Bipolar Transistor, 15V Vce, 200mA Ic, SOT-23-3
Subcategory: NPN Transistor

SMMBT2369LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

SMMBT2369LT1G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBT2369LT1G Features

  • NPN bipolar transistor configuration.
  • Maximum collector-emitter voltage of 15V.
  • Continuous collector current up to 200mA.
  • Power dissipation up to 300mW on alumina substrate.
  • Surface mount SOT-23-3 package.

SMMBT2369LT1G Applications

  • General purpose switching circuits.
  • Low power amplification stages.
  • Signal processing in consumer electronics.
  • Driver circuits for small loads.

SMMBT2369LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

15 Vdc.

What package is the SMMBT2369LT1G available in?

It is available in TO-236-3, SC-59, SOT-23-3 packages, supplied as SOT-23-3 (TO-236).

What is the operating temperature range?

-55°C to 150°C.

What is the DC current gain (hFE) of this transistor?

Minimum 40 at 10mA collector current and 1V collector-emitter voltage.

What is the collector-emitter saturation voltage?

Maximum 250mV at 1mA base current and 10mA collector current.

What are the breakdown voltage ratings?

Collector-emitter breakdown: 15V min (IB=0) and 40V min (VBE=0). Collector-base breakdown: 40V min. Emitter-base breakdown: 4.5V min.

What is the power dissipation of the device?

225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient.

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