SMMBFJ310LT3G The ON Semiconductor SMMBFJ310LT3G is an N-Channel JFET designed for VHF/UHF amplifier applications. It features a 25V Drain-Source Voltage and a 60mA maximum drain current.
Mfr Part #:

SMMBFJ310LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SMMBFJ310LT3G is an N-Channel JFET designed for VHF/UHF amplifier applications. It features a 25V Drain-Source Voltage and a 60mA maximum drain current.
Total Stock: 160,000 pcs
$ Price Range: $0.99

SMMBFJ310LT3G Available from 1 distributor

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SMMBFJ310LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
BFR Free
Configuration
Current
Current Rating (Amps)
Drain-source voltage
Forward Transfer Admittance
Gain
Gate Current
Gate Reverse Current
Gate Source Breakdown Voltage (Maximum)
Gate Source Breakdown Voltage (Minimum @ IG = 1.0 mAdc, VDS = 0)
Gate Source Cutoff Voltage (Maximum @ VDS = 10 Vdc, ID = 1.0 nAdc)
Gate Source Cutoff Voltage (Maximum)
Gate-Source Forward Voltage
Gate-Source Voltage
Halogen Free
Input Capacitance
Junction and Storage Temperature
Mounting Type
Output Admittance
Pb-Free
Power Dissipation
Reverse Transfer Capacitance
Standard Package Quantity
Supplier Device Package
Supplier Package
Technology
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Voltage
Zero Gate Voltage Drain Current

SMMBFJ310LT3G Description

Short technical summary and product information.

The ON Semiconductor SMMBFJ310LT3G is an N-Channel JFET transistor suitable for VHF and UHF amplifier applications. It offers a Drain-Source Voltage (VDS) of up to 25V and a Gate-Source Voltage (VGS) of up to 25V. The device can handle a maximum Gate Current (IG) of 10 mAdc.

 

Key electrical characteristics include a maximum Zero-Gate-Voltage Drain Current (IDSS) of 60 mAdc and a maximum Gate Source Cutoff Voltage (VGS(off)) of -6.5V. The Forward Transfer Admittance (|Yfs|) is rated up to 18 mmhos, and the Output Admittance (|yos|) is up to 250 micromhos at specific test conditions. Input Capacitance (Ciss) is a maximum of 5.0 pF, and Reverse Transfer Capacitance (Crss) is a maximum of 2.5 pF.

 

This JFET is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. It operates within a junction and storage temperature range of -55°C to +150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

SMMBFJ310LT3G Quick Information

Product Type: JFET
Series: MMBFJ310L
Canonical Name: N-Channel JFET
Subcategory: RF JFET

SMMBFJ310LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMBFJ310LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBFJ310LT3G Features

  • N-Channel JFET for RF applications.
  • 25V maximum Drain-Source Voltage.
  • 60mA maximum Drain Current.
  • Compact SOT-23-3 surface mount package.
  • Pb-Free, Halogen Free, and RoHS Compliant.

SMMBFJ310LT3G Applications

  • RF signal amplification in receivers.
  • Low-noise front-end circuits.
  • Analog switch and multiplexer designs.
  • Oscillator and mixer circuits.

SMMBFJ310LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the SMMBFJ310LT3G?

The maximum Drain-Source Voltage (VDS) for the SMMBFJ310LT3G is 25 Vdc.

What is the maximum Gate Current for the SMMBFJ310LT3G?

The maximum Gate Current (IG) for the SMMBFJ310LT3G is 10 mAdc.

What is the operating temperature range for this JFET?

The Junction and Storage Temperature range for the SMMBFJ310LT3G is -55°C to +150°C.

What package type is the SMMBFJ310LT3G supplied in?

The SMMBFJ310LT3G is supplied in a SOT-23-3 (TO-236) package.

Is the SMMBFJ310LT3G RoHS compliant?

Yes, the SMMBFJ310LT3G is RoHS3 Compliant.

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