SMMBFJ310LT1G The On Semiconductor SMMBFJ310LT1G is an N-Channel JFET designed for RF applications. It features a 25V drain-source voltage and a 60mA current rating.
Mfr Part #:

SMMBFJ310LT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMMBFJ310LT1G is an N-Channel JFET designed for RF applications. It features a 25V drain-source voltage and a 60mA current rating.
Total Stock: 168,304 pcs
$ Price Range: $0.99

SMMBFJ310LT1G Available from 3 distributors

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161,813 pcs
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SMMBFJ310LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Current Rating (Amps)
Derate above 25°C
Drain-source voltage
Forward Transfer Admittance (Minimum/Maximum @ VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Gain
Gate Current
Gate Reverse Current (Maximum @ VGS = -15 Vdc)
Gate Reverse Current (Maximum @ VGS = -15 Vdc, TA = 125 °C)
Gate Source Cutoff Voltage (Maximum @ VDS = 10 Vdc, ID = 1.0 nAdc)
Gate-Source Breakdown Voltage
Gate-Source Forward Voltage
Gate-Source Voltage
Halogen Free
Input Capacitance
Junction and Storage Temperature
Mounting Type
Output Admittance
Pb-Free
Reverse Transfer Capacitance
Supplier Device Package
Supplier Package
Technology
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Voltage
Zero Gate Voltage Drain Current (Minimum/Maximum @ VDS = 10 Vdc, VGS = 0)

SMMBFJ310LT1G Description

Short technical summary and product information.

The SMMBFJ310LT1G from On Semiconductor is an N-Channel JFET transistor designed for VHF/UHF amplifier applications. It offers a drain-source voltage rating of 25V and a gate-source voltage rating of 25V. The device has a maximum gate current of 10mAdc and a zero-gate-voltage drain current (IDSS) ranging from 24mA to 60mA for the MMBFJ310/SMMBFJ310 variants.

 

Key electrical characteristics include a forward transfer admittance (|Yfs|) between 8.0 and 18 mmhos and an output admittance (|yos|) up to 250 µmhos at 1.0 kHz. The input capacitance (Ciss) is a maximum of 5.0 pF, and the reverse transfer capacitance (Crss) is a maximum of 2.5 pF.

 

This JFET is housed in a compact SOT-23-3 (TO-236-3) surface-mount package, making it suitable for space-constrained designs. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It operates within a junction and storage temperature range of -55°C to +150°C.

SMMBFJ310LT1G Quick Information

Product Type: JFET
Canonical Name: SMMBFJ310LT1G N-Channel JFET
Subcategory: RF

SMMBFJ310LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMBFJ310LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBFJ310LT1G Features

  • N-Channel JFET for RF applications.
  • 25V maximum drain-source voltage.
  • Up to 60mA drain current.
  • Compact SOT-23-3 surface-mount package.
  • Pb-Free and RoHS Compliant.

SMMBFJ310LT1G Applications

  • RF amplifier circuits up to VHF.
  • Low-noise front-end stages.
  • Analog switches and multiplexers.
  • Oscillator and mixer circuits.

SMMBFJ310LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

25 Vdc.

What package is the SMMBFJ310LT1G available in?

SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59).

What is the operating temperature range?

-55°C to +150°C.

Is the SMMBFJ310LT1G lead-free?

Yes, it is Pb-Free.

What is the gate-source cutoff voltage?

-6.5 Vdc maximum for SMMBFJ310.

What is the forward transfer admittance?

8.0 to 18 mmhos at VDS=10V, ID=10mA, f=1kHz.

What is the maximum gate current?

10 mAdc.

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