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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Capacitance | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction to Soldering Point Thermal Resistance | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tj (Maximum) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Typical @ IC = 10 mA, Vce = 10 V) | |
| hfe (Minimum @ IC = 30 mA, VCE = 10 V) |
The Infineon Technologies SMBTA92E6327HTSA1 is a PNP Silicon High-Voltage Transistor designed for applications such as video output stages in TV sets and switching power supplies. It features a high breakdown voltage of 300V (VCEO) and a maximum collector current of 500mA.
This transistor is housed in a compact SOT23 package, suitable for surface mounting. Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of 500mV at 2mA/20mA and a DC current gain (hFE) of 25 minimum at 30mA/10V. The transition frequency (fT) is 50MHz.
With a maximum power dissipation of 360mW at 74°C and an operating junction temperature up to 150°C, the SMBTA92E6327HTSA1 is qualified according to AEC Q101 standards. Its complementary NPN type is the SMBTA42/MMBT42.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is rated at a minimum of 300V.
The maximum collector current (IC) is 500mA.
The device is available in a surface-mount SOT-23-3 package.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The DC current gain is a minimum of 25 at 1mA and 30mA, with a typical value of 40 at 10mA (VCE=10V).
The collector-emitter saturation voltage is 500mV maximum at IC=20mA and IB=2mA.
The minimum transition frequency is 50MHz.