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SMBTA42E6327HTSA1 The Infineon Technologies SMBTA42E6327HTSA1 is an NPN silicon high-voltage transistor. It offers a 300V collector-emitter voltage and 500mA collector current, packaged in a SOT-23 case.
Mfr Part #:

SMBTA42E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies SMBTA42E6327HTSA1 is an NPN silicon high-voltage transistor. It offers a 300V collector-emitter voltage and 500mA collector current, packaged in a SOT-23 case.
✓ Total Stock: 2,777 pcs
$ Price Range: $0.51

SMBTA42E6327HTSA1 Available from 1 distributor

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✓ Non-Authorised
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MW.FEP S.p.A. ✓
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2,777 pcs
On Request
2777 pcs On Request 1 On Request On Request On Request On Request On Request
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SMBTA42E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMBTA42E6327HTSA1 Description

Short technical summary and product information.

The SMBTA42E6327HTSA1 from Infineon Technologies is an NPN silicon high-voltage transistor designed for demanding applications. It features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of up to 500mA.

 

This transistor offers a low collector-emitter saturation voltage (VCEsat) of 500mV at 2mA base current and 20mA collector current, and a DC current gain (hFE) of at least 40 at 30mA collector current and 10V VCE. Its transition frequency (fT) is 70MHz at 10MHz collector current and 20V VCE.

 

The SMBTA42E6327HTSA1 is housed in a compact TO-236-3, SC-59, SOT-23-3 surface mount package. It operates at junction temperatures up to 150°C and has a total power dissipation of 360mW at or below 74°C ambient temperature. This component is qualified according to AEC Q101 standards and is Pb-free and RoHS compliant.

 

Complementary PNP types are available, making it suitable for various circuit designs requiring high voltage handling capabilities in a small footprint.

SMBTA42E6327HTSA1 Quick Information

Product Type: NPN Transistor
Canonical Name: SMBTA42 NPN Silicon High-Voltage Transistor
Subcategory: NPN

SMBTA42E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMBTA42E6327HTSA1 Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMBTA42E6327HTSA1 Features

  • NPN silicon high-voltage transistor
  • 300V collector-emitter voltage
  • 500mA continuous collector current
  • 360mW power dissipation
  • SOT-23 surface mount package

SMBTA42E6327HTSA1 Applications

  • Used in high-voltage switching circuits.
  • Suitable for amplifier driver stages.
  • Ideal for telecom and industrial equipment.
  • Applicable in power management modules.

SMBTA42E6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

300V.

What is the maximum collector current?

500mA.

What is the package type?

SOT-23-3 (PG-SOT23).

What is the maximum operating junction temperature?

150°C.

What is the DC current gain (hFE)?

Minimum 40 at Ic=30mA, Vce=10V.

What is the transition frequency?

Typical 70MHz at 10MHz, Vce=20V.

What is the collector-base capacitance?

Maximum 3pF at Vcb=20V, f=1MHz.

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