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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Voltage (VBE(on)) | |
| Breakdown Voltage (Minimum @ IC=-1 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IC=100 μA, IE=0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Capacitance | |
| Continuous Current (Maximum) | |
| Current | |
| Current Gain (Minimum @ IC=-10 mA, VCE=-1 V) | |
| Current Gain (Minimum @ IC=-100 mA, VCE=-1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction - soldering point | |
| Leakage Current (Maximum @ VCB = -80 V, IE = 0) | |
| Leakage Current (Maximum @ VCE = 60 V, IB = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage (Unspecified condition) | |
| Peak Current (Maximum @ tp ≤ 10 ms) | |
| Peak Current (Maximum) | |
| Power | |
| Power Dissipation (Maximum @ TS ≤ 79 °C) | |
| Reverse Voltage (Minimum @ IC=0) | |
| Reverse Voltage (Minimum @ IE=0) | |
| SVHC Present | |
| Saturation Voltage (Maximum @ IC = 100 mA, IB = 10 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Transition Frequency (Typical @ IC = 20 mA, VCE = 5 V) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SMBTA06E6327HTSA1 from Infineon Technologies is an NPN silicon bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications.
This transistor features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 500mA. It has a DC current gain (hFE) of at least 100 at 100mA and 1V. The transition frequency (fT) is 100MHz, making it suitable for moderate frequency applications. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.25V at 100mA and 10mA base current.
Packaged in a compact SOT-23 surface-mount package, the SMBTA06E6327HTSA1 is designed for easy integration into printed circuit boards. It operates at junction temperatures up to 150°C and has a total power dissipation of 330mW at 79°C ambient temperature. The device is qualified according to AEC Q101 standards and is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 80V minimum.
The continuous collector current is 500mA, with a peak of 1A.
The maximum power dissipation is 330mW at a soldering point temperature of 79°C.
The junction temperature can reach 150°C, and storage temperature ranges from -65°C to 150°C.
It is available in a surface-mount SOT-23 package (PG-SOT23, also known as TO-236-3 or SC-59).
The DC current gain is at least 100 at IC=10mA and VCE=1V, and at least 100 at IC=100mA and VCE=1V.
The transition frequency is typically 100MHz at IC=20mA and VCE=5V.