| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,000 pcs
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51000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
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30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SMBT3906DW1T1G is a dual PNP bipolar junction transistor array from On Semiconductor, designed for general-purpose switching and amplification applications. Each transistor features a collector-emitter voltage rating of -40 Vdc and a continuous collector current capability of -200 mAdc, making it suitable for low-power circuits requiring matched PNP transistors.
The device is housed in a compact SC-88 (SOT-363) surface-mount package, which enables efficient use of PCB space in space-constrained designs. The dual transistor configuration provides matched characteristics for differential amplifier stages or current mirror circuits.
Typical applications include load switching, signal amplification, and logic level shifting in consumer electronics and industrial control systems. The transistors' low saturation voltage ensures minimal power dissipation in on-state operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter voltage rating is -40 Vdc (indicating PNP polarity).
The maximum continuous collector current is -200 mAdc.
It is a dual PNP bipolar junction transistor array.
Yes, it contains two PNP transistors in one package.