SMBT3906DW1T1G Dual PNP bipolar transistor array with -40V collector-emitter voltage and -200mA continuous collector current in SC88 package.
Mfr Part #:

SMBT3906DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual PNP bipolar transistor array with -40V collector-emitter voltage and -200mA continuous collector current in SC88 package.
✓ Total Stock: 82,000 pcs
$ Price Range: $0.99

SMBT3906DW1T1G Available from 3 distributors

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SMBT3906DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMBT3906DW1T1G Description

Short technical summary and product information.

The SMBT3906DW1T1G is a dual PNP bipolar junction transistor array from On Semiconductor, designed for general-purpose switching and amplification applications. Each transistor features a collector-emitter voltage rating of -40 Vdc and a continuous collector current capability of -200 mAdc, making it suitable for low-power circuits requiring matched PNP transistors.

 

The device is housed in a compact SC-88 (SOT-363) surface-mount package, which enables efficient use of PCB space in space-constrained designs. The dual transistor configuration provides matched characteristics for differential amplifier stages or current mirror circuits.

 

Typical applications include load switching, signal amplification, and logic level shifting in consumer electronics and industrial control systems. The transistors' low saturation voltage ensures minimal power dissipation in on-state operation.

SMBT3906DW1T1G Quick Information

Product Type: Transistor Array (BJT)
Canonical Name: SMBT3906DW1T1G Dual PNP Bipolar Transistor Array
Subcategory: PNP

SMBT3906DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMBT3906DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMBT3906DW1T1G Features

  • Dual PNP transistor array in one package.
  • Rated for -40 Vdc collector-emitter voltage.
  • Continuous collector current up to -200 mAdc.
  • Compact SC88 surface-mount package.
  • Designed for general-purpose switching.

SMBT3906DW1T1G Applications

  • Suitable for low-power load switching.
  • Used in differential amplifier stages.
  • Ideal for current mirror circuits.
  • Applicable in signal level shifting.
  • Used in consumer electronics control.

SMBT3906DW1T1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the SMBT3906DW1T1G?

The minimum collector-emitter voltage rating is -40 Vdc (indicating PNP polarity).

What is the maximum continuous collector current?

The maximum continuous collector current is -200 mAdc.

What type of transistor is the SMBT3906DW1T1G?

It is a dual PNP bipolar junction transistor array.

Does the SMBT3906DW1T1G contain two transistors?

Yes, it contains two PNP transistors in one package.

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