| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,013 pcs
|
6013 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The Infineon Technologies SMBT3904E-6327 is a general-purpose NPN bipolar junction transistor (BJT) suitable for various switching and amplification applications. It offers a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 200mA.
Key electrical characteristics include a Vce saturation of 300mV at 5mA/50mA and a DC current gain (hFE) of at least 100 at 10mA/1V. The transistor operates at a transition frequency of 300MHz, making it suitable for moderate-speed switching circuits.
Packaged in a surface-mount SOT-23 (TO-236-3, SC-59) case, the SMBT3904E-6327 is designed for automated assembly processes. It has a maximum power dissipation of 330mW and an operating temperature range up to 150°C.
This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
It is available in SOT-23 (PG-SOT23) surface-mount package.
The maximum junction temperature is 150°C.
200mA.
300MHz.
Minimum 100 at 10mA collector current and 1V Vce.
Maximum 300mV at 5mA base current and 50mA collector current.