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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
63 pcs
|
63 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Infineon Technologies SMBT2907AE6327HTSA1 is a PNP silicon switching transistor. It is designed for applications requiring low collector-emitter saturation voltage. This component offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a maximum collector-emitter saturation voltage (VCEsat) of 1.6V at 500mA and 50mA. The transistor has a transition frequency (fT) of 200MHz.
Packaged in a SOT-23-3 surface mount package, the SMBT2907AE6327HTSA1 operates at a maximum junction temperature of 150°C and has a power dissipation of 330mW at 77°C. It is qualified according to AEC Q101 standards and comes in a Pb-free, RoHS compliant package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60V.
The maximum continuous collector current (IC) is 600mA.
It is available in a SOT-23-3 surface-mount package (PG-SOT23).
The maximum junction temperature (Tj) is 150°C.
The minimum DC current gain (hFE) is 100 at IC = 150mA and VCE = 10V.
The transition frequency (fT) is 200MHz at IC = 20mA and VCE = 20V.