SMBT2222AE6327HTSA1 The Infineon SMBT2222AE6327HTSA1 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a 40V collector-emitter voltage and 600mA collector current.
Mfr Part #:

SMBT2222AE6327HTSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon SMBT2222AE6327HTSA1 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a 40V collector-emitter voltage and 600mA collector current.
Total Stock: 7,273 pcs
$ Price Range: $0.51

SMBT2222AE6327HTSA1 Available from 2 distributors

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7,020 pcs
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253 pcs
253 pcs On Request 1 On Request On Request On Request On Request On Request

SMBT2222AE6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Emitter Saturation Voltage (Maximum @ IC = 150 mA, IB = 15 mA)
Base Emitter Saturation Voltage (Maximum @ IC = 500 mA, IB = 50 mA)
Collector Base Capacitance (Typical/Maximum @ Vcb=10 V, f=1 MHz)
Collector Base Cutoff Current (Maximum @ VCB = 60 V, IE = 0)
Collector Base Cutoff Current (Maximum @ VCB = 60 V, IE = 0, TA = 150 °C)
Collector Emitter Saturation Voltage (Maximum @ Ic=150 mA, Ib=15 mA)
Collector-Base Breakdown Voltage
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage (Maximum @ IC = -500 mA, IB = -50 mA)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC = 100 µA, VCE = 10 V)
DC Current Gain (hFE) (Minimum @ IC = 150 mA, VCE = 10 V)
DC Current Gain (hFE) (Minimum @ IC=1 mA, VCE=10 V)
DC Current Gain (hFE) (Minimum @ IC=500 mA, VCE=10 V)
DC Current Gain Hfe (Minimum @ IC = 150 mA, VCE = 1 V)
Delay Time
Emitter-Base Breakdown Voltage
Emitter-Base Capacitance
Emitter-Base Cutoff Current
Emitter-Base Voltage
Fall Time
Frequency
Junction to Soldering Point Thermal Resistance
Mounting Type
Open Circuit Output Admittance (Typical/Maximum @ IC = 1 mA, VCE = 10 V, f = 1 kHz)
Open Circuit Output Admittance (Typical/Maximum @ IC = 10 mA, VCE = 10 V, f = 1 kHz)
Open Circuit Reverse Voltage Transfer Ratio (Typical @ IC = 1 mA, VCE = 10 V, f = 1 kHz)
Open Circuit Reverse Voltage Transfer Ratio (Typical @ IC = 10 mA, VCE = 10 V, f = 1 kHz)
Operating Temperature
Pb-Free
Power
Rise Time
SVHC Present
Short Circuit Forward Current Transfer Ratio Hfe (Typical/Maximum @ IC = 1 mA, VCE = 10 V...)
Short Circuit Forward Current Transfer Ratio Hfe (Typical/Maximum @ IC = 10 mA, VCE = 10 V...)
Short Circuit Input Impedance (Typical/Maximum @ IC = 1 mA, VCE = 10 V, f = 1 kHz)
Short Circuit Input Impedance (Typical/Maximum @ IC = 10 mA, VCE = 10 V, f = 1 kHz)
Storage Temperature
Storage Time
Supplier Device Package
Supplier Package
Transistor Type
Transition Frequency Ft (Minimum @ IC = 20 mA, VCE = 20 V, f = 100 MHz)
Vce Saturation (Max) @ Ib, Ic
Voltage
dc_current_gain_hFE (Minimum @ IC = 10 mA, VCE = 10 V)

SMBT2222AE6327HTSA1 Description

Short technical summary and product information.

The Infineon SMBT2222AE6327HTSA1 is an NPN silicon switching transistor housed in a compact SOT-23 package. It is designed for general-purpose applications and features a low collector-emitter saturation voltage.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. The device offers a minimum DC current gain (hFE) of 35 at 100µA and 10V, with higher gains at increased current levels. Its transition frequency (fT) is 300MHz at 20mA and 20V.

 

With a maximum power dissipation of 330mW at 77°C, this transistor is suitable for various switching and amplification tasks. The operating temperature range is from -65°C to 150°C. The SMBT2222AE6327HTSA1 is AEC Q101 qualified and RoHS compliant.

 

The transistor is supplied in a surface-mount SOT-23 (TO-236AA) package, making it ideal for automated assembly processes. Its complementary PNP type is the SMBT2907A.

SMBT2222AE6327HTSA1 Quick Information

Product Type: NPN Bipolar Junction Transistor
Canonical Name: Infineon Technologies SMBT2222AE6327HTSA1 NPN Bipolar Junction Transistor
Subcategory: NPN

SMBT2222AE6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMBT2222AE6327HTSA1 Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMBT2222AE6327HTSA1 Features

  • NPN silicon switching transistor.
  • 40V collector-emitter voltage.
  • 600mA continuous collector current.
  • 330mW maximum power dissipation.
  • AEC Q101 qualified and RoHS compliant.

SMBT2222AE6327HTSA1 Applications

  • General-purpose switching in low-power circuits.
  • Driver stage for relays and solenoids.
  • Signal amplification in audio and sensor interfaces.
  • Used in automotive control modules (AEC qualified).

SMBT2222AE6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of SMBT2222AE6327HTSA1?

The device is housed in a surface-mount SOT-23 package, also known as TO-236-3 or SC-59.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

Is the SMBT2222AE6327HTSA1 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is 40V.

What is the maximum collector current?

The maximum collector current is 600mA.

What is the transition frequency?

The minimum transition frequency is 300MHz.

Is the device AEC qualified?

Yes, it is AEC-Q101 qualified for automotive applications.

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