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SMBT2222AE6327 The Infineon SMBT2222AE6327 is an NPN bipolar junction transistor in a surface mount SOT-23 package. It features a 40V collector-emitter breakdown voltage and 600mA collector current.
Mfr Part #:

SMBT2222AE6327

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon SMBT2222AE6327 is an NPN bipolar junction transistor in a surface mount SOT-23 package. It features a 40V collector-emitter breakdown voltage and 600mA collector current.
✓ Total Stock: 1,605 pcs
$ Price Range: $0.33

SMBT2222AE6327 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,410 pcs
On Request
1410 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
195 pcs
On Request
195 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMBT2222AE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Industrial Grade
Lead Style
Mounting Type
Operating Temperature
SVHC Present
Storage Temperature
Supplier Device Package
Transistor Type
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SMBT2222AE6327 Description

Short technical summary and product information.

The Infineon SMBT2222AE6327 is a general-purpose NPN bipolar junction transistor (BJT) designed for various electronic applications. It is housed in a compact TO-236-3, SC-59, SOT-23-3 surface mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a maximum collector current (Ic) of 600mA and a collector-emitter breakdown voltage (Vce) of 40V. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. Its transition frequency is rated at 300MHz, indicating suitability for moderate frequency applications.

 

The SMBT2222AE6327 operates at temperatures up to 150°C (TJ). Its Vce saturation is specified at a maximum of 1V when operating at 50mA base current and 500mA collector current. The maximum power dissipation is 330mW.

 

This component is mounted using a surface mount technique. It is part of the MBT2222A base product family. Environmental compliance includes RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1 (Unlimited).

SMBT2222AE6327 Quick Information

Product Type: NPN Transistor
Series: SMBT2222A
Canonical Name: Infineon SMBT2222AE6327 NPN Transistor
Subcategory: Single

SMBT2222AE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SMBT2222AE6327 Estimated Pricing

Qty Low High
1+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMBT2222AE6327 Features

  • NPN bipolar junction transistor.
  • 40V collector-emitter breakdown voltage.
  • 600mA maximum collector current.
  • 300MHz transition frequency.
  • Surface mount SOT-23 package.

SMBT2222AE6327 Applications

  • Used in general purpose switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for low-power driver applications.
  • Employed in push-pull and complementary pairs.

SMBT2222AE6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum operating temperature of the SMBT2222AE6327?

The maximum operating junction temperature is 150°C.

What package options are available for the SMBT2222AE6327?

The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages, with surface mount mounting type. The supplier device package is PG-SOT23.

What is the transistor type of the SMBT2222AE6327?

It is an NPN bipolar junction transistor.

What is the maximum collector current of the SMBT2222AE6327?

The maximum collector current (Ic) is 600mA.

What is the collector-emitter breakdown voltage of the SMBT2222AE6327?

The maximum collector-emitter breakdown voltage (VCEO) is 40V.

What is the DC current gain (hFE) of the SMBT2222AE6327?

The minimum DC current gain is 100 at 150mA collector current and 10V VCE.

What is the transition frequency of the SMBT2222AE6327?

The transition frequency (fT) is 300MHz.

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