| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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795 pcs
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795 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade |
The Infineon Technologies SMBT2222AE6327HTSA1 is a surface-mount NPN bipolar junction transistor (BJT). It is designed for general-purpose applications and features a maximum collector current (Ic) of 600 mA and a collector-emitter breakdown voltage (Vce) of 40 V.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, a Vce saturation of 1V at 50mA and 500mA, and a transition frequency of 300 MHz. The maximum power dissipation is rated at 330 mW, and it operates at temperatures up to 150°C (TJ).
This transistor comes in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. It is classified under Moisture Sensitivity Level 1 (Unlimited) and is RoHS3 compliant.
This part is identified by its base product number MBT2222A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) is 600 mA.
The collector-emitter breakdown voltage (Vce) is 40 V.
The minimum DC current gain (hFE) is 100 at 150mA and 10V.
The operating temperature range is up to 150°C (TJ).
It is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, it is RoHS3 Compliant.