Mfr Part #:

SMBT2222A-E6327

Mfr Name: Infineon

The Infineon SMBT2222AE6327HTSA1 is an NPN bipolar junction transistor designed for surface mount applications. It offers a 40V collector-emitter breakdown voltage and 600mA continuous collector current.

✓ Total Stock: 4,604 pcs

$ Price Range: $0.05

SMBT2222A-E6327 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	2,700 pcs On Request	2700 pcs	On Request	1	On Request	On Request	07+25	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,861 pcs On Request	1861 pcs	On Request	1	On Request	On Request	0646+	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	43 pcs On Request	43 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SMBT2222A-E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Lead Style	Gull-Wing
Mounting Type	Surface Mount
Operating Temperature	150°C
Supplier Device Package	PG-SOT23
Tape & Reel	Yes
Vce Saturation (Max)	1V

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SMBT2222A-E6327 Description

Short technical summary and product information.

The Infineon SMBT2222AE6327HTSA1 is a general-purpose NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-23-3 surface-mount package, making it ideal for space-constrained designs.

Key electrical characteristics include a maximum collector current (Ic) of 600mA and a collector-emitter breakdown voltage (Vce) of 40V. The transistor exhibits a DC current gain (hFE) of 100 minimum at 150mA and 10V, and a transition frequency (fT) of 300MHz. The maximum power dissipation is rated at 330mW, and the Vce saturation is 1V maximum at 50mA base current and 500mA collector current.

This component operates within a temperature range of -55°C to 150°C. Its surface mount capability simplifies integration into printed circuit boards using standard reflow soldering processes. The SMBT2222AE6327HTSA1 is a reliable choice for amplification and switching tasks in electronic circuits.

SMBT2222A-E6327 Quick Information

Product Type: NPN Transistor

Canonical Name: Infineon SMBT2222AE6327HTSA1 NPN Transistor

Subcategory: Single

SMBT2222A-E6327 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SMBT2222A-E6327 Estimated Pricing

Qty	Low	High
1+	$0.05	$0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMBT2222A-E6327 Features

NPN bipolar junction transistor.
Surface mount SOT-23-3 package.
40V collector-emitter breakdown voltage.
600mA maximum collector current.
300MHz transition frequency.

SMBT2222A-E6327 Applications

General purpose amplification.
Switching applications.
Compact electronic circuits.
Surface mount PCB integration.

SMBT2222A-E6327 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector current?

The maximum collector current (Ic) is 600 mA.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 100 at a test condition of 150mA collector current and 10V collector-emitter voltage.

What is the transition frequency?

The transition frequency is 300 MHz.

What is the maximum power dissipation?

The maximum power dissipation is 330 mW.

What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 40 V.

What is the operating temperature range?

The maximum junction operating temperature is 150°C.

What package is this transistor available in?

The transistor is available in a surface-mount PG-SOT23 package, which is also equivalent to TO-236-3, SC-59, and SOT-23-3.