| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | 1339 | On Request | On Request |
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| Tape & Reel |
The SMBJ8.0AE3TR from Microsemi Corporation is a unidirectional Transient Voltage Suppressor (TVS) diode. This component is designed to protect sensitive electronic circuits from voltage transients.
Key electrical specifications include a peak pulse power dissipation of 0.6kW and a maximum off-state voltage of 8V. The breakdown voltage is rated at 8.89V, with a maximum forward impulse current of 44.1A. The semiconductor structure is unidirectional, indicating its suitability for specific protection applications where current flow is primarily in one direction.
This TVS diode is housed in a DO214AA (SMB) surface-mount package, making it suitable for automated assembly processes. It operates within a wide temperature range of -65°C to 150°C. The standard package quantity is 3000 pieces on a reel, facilitating high-volume manufacturing.
Applications for this TVS diode include protecting power lines, data lines, and sensitive semiconductor components from electrostatic discharge (ESD) and other transient overvoltage events.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak pulse power dissipation is 0.6 kW.
The breakdown voltage is 8.89 V.
The maximum forward impulse current is 44.1 A.
It has a unidirectional semiconductor structure.
The operating temperature range is -65 to 150 °C.
It is supplied in a DO214AA, SMB case.