| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,740 pcs
|
5740 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Sanken SMA5135 is a MOSFET array specifically engineered for 3-phase motor drive systems. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. Its on-resistance (Rds On) is rated at a maximum of 220mOhm under specific test conditions (3A, 4V and 3A, 10V).
The device operates at temperatures up to 150°C and has a maximum power dissipation of 4W (Ta) or 29W (Tc). It is configured with 3 N-channel and 3 P-channel MOSFETs, making it suitable for 3-phase inverter applications. The input capacitance (Ciss) is up to 790pF at 10V, and the gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA.
Packaged in a 12-SIP configuration, the SMA5135 is designed for through-hole mounting. This robust packaging and mounting type ensure reliable integration into various electronic circuits. The MOSFET technology employed offers efficient switching and power handling capabilities essential for motor control.
Environmental compliance includes RoHS3 compliance. The component is supplied in industry-standard static shielding packaging to protect against electrostatic discharge during handling and transportation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The SMA5135 is available in a 12-SIP through-hole package.
The maximum operating junction temperature is 150°C.
It consists of 3 N-Channel and 3 P-Channel MOSFETs arranged as a 3-phase inverter.
The maximum on-resistance (Rds(on)) is 220mOhm at 3A with 4V or 10V gate drive.
The maximum input capacitance (Ciss) is 790pF at 10V Vds (320pF also specified).
The maximum gate threshold voltage (Vgs(th)) is 2V at 250µA drain current.