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SKW30N60HS

The Infineon Technologies SKW30N60HS is an NPT IGBT transistor designed for high-speed applications. It offers a 600V voltage rating and a 41A current capability.

✓ Total Stock: 2,400 pcs

$ Price Range: $0.99

SKW30N60HS Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,400 pcs On Request	2400 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SKW30N60HS Description

Short technical summary and product information.

The SKW30N60HS from Infineon Technologies is a high-speed NPT IGBT (Insulated Gate Bipolar Transistor) designed for demanding applications. It features a robust 600V collector-emitter voltage and a continuous collector current of 41A at 25°C, with a pulsed capability of 112A. The device offers a power dissipation of 250W at 25°C and operates across a wide temperature range from -55°C to 150°C.

Key electrical characteristics include a low collector-emitter saturation voltage of 3.15V at 15V gate-emitter voltage and 30A collector current, and a gate charge of 141 nC. The IGBT is designed for operation above 30 kHz and boasts a short circuit withstand time of 10 µs.

Packaged in a standard PG-TO247-3 through-hole configuration, the SKW30N60HS is suitable for various power switching applications. Its NPT technology provides parallel switching capability and stable temperature behavior, making it a reliable choice for power electronics designs.

SKW30N60HS Quick Information

Product Type: IGBT Transistor

Canonical Name: SKW30N60HS NPT IGBT

Subcategory: Single

SKW30N60HS Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free lead plating

SKW30N60HS Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SKW30N60HS Features

High speed NPT IGBT technology.
600V collector-emitter voltage rating.
41A continuous collector current.
250W power dissipation.
TO-247-3 through-hole package.

SKW30N60HS Applications

Designed for operation above 30 kHz.
Suitable for power switching circuits.
Robust short circuit protection.
Temperature stable performance.

SKW30N60HS FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage of the SKW30N60HS?

The collector-emitter voltage is 600 V.

What is the continuous collector current for the SKW30N60HS?

The continuous collector current is 41 A at 25°C and 30 A at 100°C.

What is the operating temperature range for this IGBT?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SKW30N60HS supplied in?

The SKW30N60HS is supplied in a PG-TO247-3 package.

What is the power dissipation of the SKW30N60HS?

The power dissipation is 250 W at 25°C.

What is the short circuit withstand time for the SKW30N60HS?

The short circuit withstand time is 10 µs.

Is the SKW30N60HS RoHS compliant?

The RoHS status is RoHS3 Compliant.

Category	Transistors - IGBTs - Single
Manufacturer Name	Infineon Technologies
Current	41 A
Gate Charge	141 nC
IGBT Type	NPT
Input Capacitance	1500 pF
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power	250 W
Reverse Recovery Time (trr)	125 ns
Supplier Device Package	PG-TO247-3-1
Switching Energy	480 µJ
Td (on	20 ns
Test Condition	400V, 30A, 11Ohm, 15V
Vce(on) (Max) @ Vge, Ic	3.15 V
Voltage	600 V