Mfr Part #:

SKW07N120

Mfr Name: Infineon

The Infineon SKW07N120 is a Fast IGBT in NPT-technology with a soft, fast recovery anti-parallel EmCon diode. It offers lower Eoff compared to previous generations.

✓ Total Stock: 812 pcs

$ Price Range: $3.63

SKW07N120 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	406 pcs On Request	406 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	406 pcs On Request	406 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SKW07N120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	90nC
Input Capacitance	870pF
Mounting Type	Through Hole
Power Dissipation	125W
Storage Temperature	-55°C ~ 150°C

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SKW07N120 Description

Short technical summary and product information.

The Infineon SKW07N120 is a Fast IGBT featuring NPT-technology and a soft, fast recovery anti-parallel EmCon diode. This component is designed for applications such as motor controls, inverters, and SMPS. Its NPT-Technology provides very tight parameter distribution, high ruggedness, and stable temperature behavior, along with parallel switching capability.

Key electrical specifications include a collector-emitter voltage (VCE) of 1200V, a DC collector current (IC) of 16.5A at 25°C and 7.9A at 100°C, and a pulsed collector current (ICpuls) of 27A. The diode forward current (IF) is rated at 13A at 25°C and 7A at 100°C, with a pulsed diode current (IFpuls) of 27A. The gate-emitter voltage (VGE) is ±20V, and it has a short circuit withstand time (tSC) of 10µs.

Thermal characteristics include a power dissipation (Ptot) of 125W at 25°C, an operating junction and storage temperature range of -55°C to 150°C, and an IGBT thermal resistance (RthJC) of 1 K/W. The component is supplied in a PG-TO-247-3 package, suitable for through-hole mounting.

This IGBT is qualified according to JEDEC for target applications and features Pb-free lead plating, making it RoHS compliant.

SKW07N120 Quick Information

Product Type: IGBT Transistor

Canonical Name: SKW07N120 Fast IGBT

Subcategory: Single

SKW07N120 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free lead plating

SKW07N120 Estimated Pricing

Qty	Low	High
1+	$3.63	$3.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

SKW07N120 Features

Fast IGBT in NPT-technology
Soft, fast recovery anti-parallel diode
Short circuit withstand time of 10µs
Lower Eoff compared to previous generation
Designed for motor controls and inverters

SKW07N120 Applications

Suitable for motor controls
Ideal for inverter applications
Designed for SMPS systems
High ruggedness and temperature stability

SKW07N120 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the SKW07N120?

1200V.

What is the package type of the SKW07N120?

PG-TO-247-3.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum collector current?

16.5A at 25°C, and 7.9A at 100°C.

Does the SKW07N120 include an internal diode?

Yes, it includes a fast-recovery diode with a forward current rating of 13A at 25°C.

What is the gate-emitter threshold voltage?

3 to 5V.

What is the short circuit withstand time?

10µs under specified conditions (VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C).