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SKIIP37NAB12T4V1 The Semikron SKIIP37NAB12T4V1 is an N-Channel IGBT power module designed for power control applications. It features a maximum collector-emitter voltage of 1200V and a maximum collector current of 96A.
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SKIIP37NAB12T4V1

Available from 1 distributors
Mfr Name: SEMIKRON
SEMIKRON
The Semikron SKIIP37NAB12T4V1 is an N-Channel IGBT power module designed for power control applications. It features a maximum collector-emitter voltage of 1200V and a maximum collector current of 96A.
✓ Total Stock: 570 pcs
$ Price Range: $9.79

SKIIP37NAB12T4V1 Available from 1 distributor

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SKIIP37NAB12T4V1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SKIIP37NAB12T4V1 Description

Short technical summary and product information.

The Semikron SKIIP37NAB12T4V1 is an Insulated Gate Bipolar Transistor (IGBT) power module. It is engineered for power control applications and utilizes silicon as its element material.

 

Key electrical specifications include a maximum collector-emitter voltage of 1200V and a maximum collector current (IC) of 96A. The module operates as an N-Channel device.

 

This IGBT power module comes in a MINISKIIP 3 package with 68 pins and is designed for flange mounting. Its robust construction and specifications make it suitable for various industrial power control systems.

SKIIP37NAB12T4V1 Quick Information

Product Type: IGBT Power Module
Canonical Name: SEMIKRON SKIIP37NAB12T4V1 N-Channel IGBT Power Module
Subcategory: Power Module

SKIIP37NAB12T4V1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SKIIP37NAB12T4V1 Estimated Pricing

Qty Low High
1+ $9.79 $9.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

SKIIP37NAB12T4V1 Features

  • 1200V maximum collector-emitter voltage.
  • 96A maximum collector current.
  • N-Channel IGBT transistor type.
  • Designed for power control applications.
  • MINISKIIP 3, 68-pin package.

SKIIP37NAB12T4V1 Applications

  • Used in industrial power conversion systems
  • Suitable for motor drive applications
  • Ideal for high-voltage power switching
  • Designed for power control in demanding environments

SKIIP37NAB12T4V1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SKIIP37NAB12T4V1?

The maximum collector-emitter voltage is 1200V.

What is the maximum collector current (IC) for the SKIIP37NAB12T4V1?

The maximum collector current (IC) is 96A.

What type of transistor is the SKIIP37NAB12T4V1?

It is an Insulated Gate Bipolar Transistor (IGBT).

What is the channel type of the SKIIP37NAB12T4V1?

The channel type is N-Channel.

What is the package style for the SKIIP37NAB12T4V1?

The package style is Flange Mount.

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