| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,236 pcs
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3236 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Panasonic Electronic Components SK8603190L is a single N-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V. It offers a continuous current capability of 12A when measured at the case temperature (Tc) and 19A at ambient temperature (Ta). The MOSFET has a maximum on-resistance (Rds On) of 10mOhm at 8A and 10Vgs, and a gate threshold voltage (Vgs(th)) of 3V at 1.01mA.
Designed for surface mounting, this component comes in an 8-PowerSMD, Flat Leads package (HSO8-F4-B). It operates within a temperature range of -150°C (TJ) and has a maximum power dissipation of 2.7W (Ta) or 19W (Tc). Key electrical characteristics include an input capacitance (Ciss) of 1092 pF at 10V and a gate charge (Qg) of 6.3 nC at 4.5Vgs. The maximum gate-to-source voltage is ±20V.
This MOSFET is suitable for various power switching applications where efficient and reliable performance is required. Its robust construction and specified electrical parameters make it a viable option for designs needing a dependable N-channel MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerSMD with flat leads (HSO8-F4-B).
150°C.
10 mOhm maximum at Id=8A, Vgs=10V.
6.3 nC maximum at Vgs=4.5V.
1092 pF at Vds=10V.
12A at ambient temperature (Ta) and 19A at case temperature (Tc).