| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,803 pcs
|
1803 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SIZF906DT-T1-GE3 is a dual N-channel MOSFET from Vishay, designed for half-bridge and other power applications. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 60A at a case temperature of 25°C. The device offers low on-resistance of 3.8 mΩ at VGS = 10V and 5.3 mΩ at VGS = 4.5V, enabling efficient switching. Typical gate charge is 11 nC for one channel and 46 nC for both channels combined. Input capacitance is rated up to 8200 pF at 15V drain-source. The MOSFET operates over a junction temperature range of -55°C to 150°C. It is packaged in a PowerPAIR 6x5F surface-mount case and is supplied on cut tape. The part is lead-free and halogen-free per datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAIR 6x5F.
-55°C to 150°C.
60A.
3.8 mΩ.
2.2V maximum at Id = 250µA.