| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,328 pcs
|
1328 pcs | On Request | 1 | On Request | On Request | 18+22+ | On Request | On Request |
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| Manufacturer Name | |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The SIZF906BDT-T1-GE3 is a dual N-channel 30V (D-S) MOSFET from Vishay. It features a drain-to-source voltage rating of 30V and a maximum continuous drain current of 105A at 25°C case temperature (84A at 70°C case). The device achieves a low maximum on-resistance of 2.1mOhm at VGS=10V, with one channel offering even lower resistance of 0.68mOhm.
This dual MOSFET is designed for high-efficiency power conversion applications such as synchronous rectification in DC-DC converters, load switches, and motor drives. The integrated dual configuration saves board space and simplifies layout in compact power management designs.
The MOSFET supports a high current rating of 105A at the case, but ambient ratings are lower (36A at 25°C ambient). For reliable operation, proper thermal management is recommended when operating at high currents.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
105A.
Maximum 2.1mOhm (and 0.68mOhm for the other channel).
It is a dual N-channel MOSFET.