| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This Vishay Dale SIZ998DT-T1-GE3 is a dual N-channel MOSFET array featuring Schottky diodes. It offers a drain-to-source voltage (Vdss) of 30V and supports continuous current ratings of 20A and 60A (Tc). The on-resistance (Rds On) is specified at a maximum of 6.7mOhm at 15A, 10V, and 2.8mOhm at 19A, 10V. Gate charge (Qg) is 8.1nC at 4.5V and 19.8nC at 4.5V.
The device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 20.2W and 32.9W. It utilizes MOSFET (Metal Oxide) technology and is configured as 2 N-Channel devices with integrated Schottky diodes.
Packaged in an 8-PowerWDFN format, this component is designed for surface mounting. The supplier package is identified as 8-PowerPair® (6x5). It is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SIZ998DT-T1-GE3 is 30V.
The operating temperature range for the SIZ998DT-T1-GE3 is -55°C to 150°C (TJ).
The SIZ998DT-T1-GE3 is available in an 8-PowerWDFN package.
The SIZ998DT-T1-GE3 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the SIZ998DT-T1-GE3 is 1.