| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,290 pcs
|
2290 pcs | On Request | 1 | On Request | On Request | 1428+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIZ904DT-T1-GE3 is a dual N-channel MOSFET with a 30V drain-source voltage rating. It is housed in a 6-PowerPair™ package, suitable for surface mounting.
This MOSFET offers distinct performance characteristics for its two channels. Channel-1 has a maximum Rds(on) of 0.024 Ohm at 10V Vgs, and Channel-2 has a maximum Rds(on) of 0.0135 Ohm at 10V Vgs. Continuous drain current ratings are 12A for Channel-1 and 16A for Channel-2 at 25°C case temperature.
Key electrical features include a logic level gate, a gate charge of 3.8 nC (typical) for Channel-1 and 7.3 nC (typical) for Channel-2, and a gate threshold voltage of 2.5V maximum. The operating temperature range is -55°C to +150°C.
Applications for this MOSFET include notebook system power, POL (Power Over Load), and low current DC/DC converters. It is designed with TrenchFET® power MOSFET technology and is 100% Rg and UIS tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The package is 6-PowerPair™.
The operating temperature range is -55°C to +150°C.
Yes, it is RoHS3 Compliant.
The maximum Rds On is 0.024 Ohm for Channel-1 and 0.0135 Ohm for Channel-2.
The continuous drain current ratings are 12A for Channel-1 and 16A for Channel-2 at TC = 25°C.