SIZ902DT-T1-GE3 The Vishay Dale SIZ902DT-T1-GE3 is a dual N-channel MOSFET designed for notebook system power and POL applications. It features TrenchFET technology and a 30V drain-source voltage rating.
Mfr Part #:

SIZ902DT-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIZ902DT-T1-GE3 is a dual N-channel MOSFET designed for notebook system power and POL applications. It features TrenchFET technology and a 30V drain-source voltage rating.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SIZ902DT-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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3,000 pcs
3000 pcs On Request 1 On Request On Request 1912+ On Request On Request

SIZ902DT-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
Voltage

SIZ902DT-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIZ902DT-T1-GE3 is a dual N-channel MOSFET belonging to the TrenchFET power MOSFET family. It is rated for a 30V drain-source voltage and can handle a continuous drain current of up to 16A. The device offers low on-resistance, with a maximum of 6.4mOhm at 16A and 10V Vgs, and 12mOhm at 13.8A and 10V Vgs.

 

This MOSFET is suitable for applications such as notebook system power and synchronous buck converters. It is available in the PowerPAIR 6x5 package, which is surface-mounted. The operating temperature range is -55°C to 150°C.

 

Key electrical characteristics include a gate charge of 21nC typical at 10V Vgs and an input capacitance of 790pF maximum at 15V Vds. The device is tested for 100% Rg and UIS, ensuring robust performance.

SIZ902DT-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiZ902DT Dual N-Channel 30V PowerPAIR MOSFET
Subcategory: Dual N-Channel

SIZ902DT-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIZ902DT-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIZ902DT-T1-GE3 Features

  • Dual N-Channel 30V MOSFET.
  • TrenchFET power MOSFET technology.
  • Low on-resistance: 6.4mOhm max.
  • High continuous drain current: 16A.
  • PowerPAIR 6x5 surface-mount package.

SIZ902DT-T1-GE3 Applications

  • Used in DC-DC converter output stages.
  • Suitable for load switching in portable devices.
  • Applied in battery management and protection.
  • Used in power distribution systems.

SIZ902DT-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the SIZ902DT-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the SIZ902DT-T1-GE3 available in?

It is available in an 8-PowerWDFN package, also known as 8-PowerPair (6x5).

What is the maximum drain-source voltage of the SIZ902DT-T1-GE3?

The maximum drain-source voltage is 30V.

What is the maximum continuous drain current of the SIZ902DT-T1-GE3?

The maximum continuous drain current is 16A at case temperature 25°C.

What is the on-resistance of the SIZ902DT-T1-GE3?

The maximum on-resistance is 6.4mOhm at 16A drain current and 10V gate-source voltage.

What is the gate charge of the SIZ902DT-T1-GE3?

The maximum gate charge is 21nC at 10V gate-source voltage.

What is the maximum power dissipation of the SIZ902DT-T1-GE3?

The maximum power dissipation is 29W at case temperature 25°C.

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