SIZ790DT-T1-GE3 The Vishay Dale SiZ790DT-T1-GE3 is a dual N-channel MOSFET array featuring 30V drain-source voltage and high current capabilities. It is housed in a 6-PowerPair surface mount package.
Mfr Part #:

SIZ790DT-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SiZ790DT-T1-GE3 is a dual N-channel MOSFET array featuring 30V drain-source voltage and high current capabilities. It is housed in a 6-PowerPair surface mount package.
✓ Total Stock: 2,827 pcs
$ Price Range: $0.99

SIZ790DT-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,827 pcs
2827 pcs On Request 1 On Request On Request 17+ On Request On Request

SIZ790DT-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SIZ790DT-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiZ790DT-T1-GE3 is a dual N-channel MOSFET array designed for system power applications. It offers a drain-source voltage of 30V and supports high continuous drain currents of up to 16A for Channel-1 and 35A for Channel-2.

 

The MOSFET array features low on-resistance values, such as 9.3mOhm at 15A and 10V for Channel-1, and 4.7mOhm at 10V for Channel-2. It also includes a logic level gate and a Schottky diode.

 

This component is packaged in a 6-PowerPair™ surface mount package, making it suitable for compact designs. The operating temperature range is -55°C to 150°C (TJ).

 

Key electrical characteristics include a gate charge of 7.7 nC (typical) for Channel-1 and 17 nC (typical) for Channel-2 at 10V Vgs. The input capacitance is rated at 830pF at 15V Vds.

SIZ790DT-T1-GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
Subcategory: Dual N-Channel

SIZ790DT-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIZ790DT-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIZ790DT-T1-GE3 Features

  • Dual N-channel MOSFET array.
  • 30V drain-source voltage rating.
  • High current capability up to 35A.
  • Low on-resistance values.
  • 6-PowerPair surface mount package.

SIZ790DT-T1-GE3 Applications

  • Suitable for system power applications.
  • Used in notebook and server designs.
  • Ideal for POL converters.
  • Applicable for synchronous buck converters.

SIZ790DT-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SiZ790DT-T1-GE3?

The drain-source voltage (Vds) for the SiZ790DT-T1-GE3 is 30V.

What is the maximum continuous drain current for the SiZ790DT-T1-GE3?

The maximum continuous drain current is 16A for Channel-1 and 35A for Channel-2 at TC = 25°C.

What is the on-resistance of the SiZ790DT-T1-GE3?

The on-resistance (Rds On) is 9.3mOhm at 15A, 10V for Channel-1 and 4.7mOhm at 10V for Channel-2.

What is the operating temperature range for this MOSFET array?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SiZ790DT-T1-GE3 in?

The SiZ790DT-T1-GE3 is in a 6-PowerPair™ package.

Is the SiZ790DT-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

Does the SiZ790DT-T1-GE3 meet Halogen Free standards?

Yes, it is Halogen-free according to IEC 61249-2-21 Definition.

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