| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The Vishay Siliconix SiZ710DT-T1-GE3 is a high-performance N-Channel Power MOSFET utilizing TrenchFET technology. It is rated for a 20V drain-source voltage and features low on-resistance values, with R DS(on) as low as 0.0033 Ω at VGS = 10V for Channel-2.
This MOSFET is designed for demanding applications such as notebook system power, POL (Point of Load) converters, and synchronous buck converters. It is tested 100% for Rg and UIS, ensuring reliability and performance.
The device comes in a PowerPAIR 6 x 3.7 package, suitable for surface mounting. It is also compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.
Key electrical characteristics include a continuous drain current of up to 35A for Channel-2 and a maximum power dissipation of 48W at TC = 25°C. The operating junction temperature range is -55°C to 150°C.
The drain-source voltage rating is 20V.
For Channel-1, R DS(on) is 0.0068 Ω at VGS = 10V and 0.0090 Ω at VGS = 4.5V. For Channel-2, R DS(on) is 0.0033 Ω at VGS = 10V and 0.0043 Ω at VGS = 4.5V.
The typical gate charge is 6.9 nC for Channel-1 and 18.2 nC for Channel-2.
The package type is PowerPAIR 6 x 3.7.
Yes, the SiZ710DT-T1-GE3 is RoHS3 compliant.
The Moisture Sensitivity Level is 1.
Yes, it is Halogen-free according to IEC 61249-2-21 definition.