| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
652 pcs
|
652 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SiZ710DT-T1-GE3 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vds) of 20V. It utilizes TrenchFET technology for enhanced performance.
This MOSFET offers low on-resistance values, with Rds(on) as low as 0.0033 Ohms at a gate-source voltage of 10V and a drain current of 35A. It also features a low gate charge (Qg) of 18.2 nC typical at 10V gate drive.
The device is rated for continuous drain currents of up to 16A for channel-1 and 35A for channel-2 at 25°C case temperature. Maximum power dissipation is 27W for channel-1 and 48W for channel-2 at 25°C case temperature.
Packaged in a 6-PowerPair™ surface mount package, the SiZ710DT-T1-GE3 is suitable for applications such as notebook system power, POL, and synchronous buck converters. It operates over a temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
6-PowerPair™ surface mount package.
-55°C to 150°C.
6.8 mOhm at Vgs = 10V and 19A.
2.2V maximum at 250µA.
16A at TA=25°C and 35A at TC=25°C (die 2).
18 nC at 10V (max).