SIZ700DT-T1-GE3 Dual N-channel MOSFET array in a half-bridge configuration. Rated for 20V drain-source voltage and 16A continuous drain current with 8.6mOhm typical on-resistance.
Mfr Part #:

SIZ700DT-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
Dual N-channel MOSFET array in a half-bridge configuration. Rated for 20V drain-source voltage and 16A continuous drain current with 8.6mOhm typical on-resistance.
✓ Total Stock: 3,063 pcs
$ Price Range: $0.99

SIZ700DT-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,013 pcs
3013 pcs On Request 1 On Request On Request 11+ On Request On Request
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request On Request On Request On Request

SIZ700DT-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SIZ700DT-T1-GE3 Description

Short technical summary and product information.

The SIZ700DT-T1-GE3 is a dual N-channel MOSFET array from Vishay, configured as a half bridge. It features a drain-source breakdown voltage of 20V and a continuous drain current rating of 16A at 25°C case temperature. The device offers a typical on-resistance of 8.6mOhm at 10V gate drive and 15A drain current.

 

This MOSFET array is designed for surface mount assembly in a 6-PowerPair package. It operates over a junction temperature range of -55°C to 150°C. The device is lead-free and halogen-free, and is supplied in tape and reel packaging.

 

The half-bridge configuration makes this part suitable for DC-DC converters and other power management circuits where two N-channel MOSFETs are needed in a compact footprint. The low on-resistance helps minimize conduction losses in high-current applications.

SIZ700DT-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiZ700DT N-Channel 20V MOSFET
Subcategory: N-Channel

SIZ700DT-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIZ700DT-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIZ700DT-T1-GE3 Features

  • Dual N-channel half-bridge MOSFET array.
  • 20V drain-source breakdown voltage rating.
  • 16A continuous drain current at 25°C.
  • 8.6mOhm typical on-resistance at 10V gate drive.
  • Surface mount 6-PowerPair package.

SIZ700DT-T1-GE3 Applications

  • Used in DC-DC converter power stages.
  • Suitable for synchronous buck converter designs.
  • Ideal for power management in portable devices.
  • Used in half-bridge and bridge circuit topologies.

SIZ700DT-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SIZ700DT-T1-GE3?

The minimum drain-source breakdown voltage is 20V at VGS = 0V and ID = 250µA.

What is the continuous drain current rating?

The continuous drain current is 16A at TC = 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 8.6mOhm at 15A drain current and 10V gate-source voltage.

What package does the SIZ700DT-T1-GE3 come in?

It comes in a surface mount 6-PowerPair package.

Is the SIZ700DT-T1-GE3 lead-free and halogen-free?

Yes, the datasheet indicates it is lead (Pb)-free and halogen-free.

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