| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SISS92DN-T1-GE3 is a single N-Channel MOSFET designed for various applications including primary side switching, synchronous rectification, DC/DC topologies, lighting, and load switching. It features TrenchFET® and ThunderFET® technologies for optimized performance.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 250V and a gate-source voltage (Vgs) of ±20V. The on-resistance (Rds(on)) is rated at a maximum of 173mOhm at 3.6A and 10V Vgs. It supports a continuous drain current of up to 12.3A at 25°C case temperature and 3.4A at 25°C ambient temperature.
This MOSFET is housed in a PowerPAK® 1212-8S surface-mount package. It operates within a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 250 V.
The typical on-resistance is 173 mOhm at 3.6A and 10V Vgs.
The continuous drain current is 12.3 A at 25°C case temperature.
The SISS92DN-T1-GE3 is supplied in the PowerPAK 1212-8S package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the SISS92DN-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.