| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SISS72DN-T1-GE3 is a single N-Channel MOSFET designed for various applications including primary side switching and synchronous rectification. It features TrenchFET® and ThunderFET® technologies for optimized performance.
Key electrical specifications include a maximum drain-source voltage (Vds) of 150V and a maximum on-resistance (Rds(on)) of 42mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 7A. The continuous drain current is rated at 25.5A under a case temperature of 25°C and 7A under an ambient temperature of 25°C. The gate charge (Qg) is typically 22nC at 10V Vgs.
This MOSFET operates within a junction temperature range of -55°C to 150°C. It is supplied in a PowerPAK® 1212-8S package, designed for surface mounting. The maximum power dissipation is 65.8W when the case temperature is 25°C and 5.1W when the ambient temperature is 25°C.
The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
PowerPAK 1212-8S surface mount package.
-55°C to 150°C junction temperature.
Maximum 42mOhm at 7A, 10V.
Maximum 4V at 250µA.
25.5A at case temperature 25°C, 7A at ambient.
TrenchFET with ThunderFET technology.