| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,189 pcs
|
2189 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SISS71DN-T1-GE3 is a P-Channel MOSFET from Vishay Dale. It features a maximum drain-source voltage of -100V and continuous drain current of -23A at Tc=25°C. The on-resistance is typically 59mOhm at Vgs=10V and Id=5A. The device is housed in a PPAK1212-8S surface-mount package. It is suitable for power management applications requiring high efficiency and fast switching. The gate threshold voltage is 2.5V at 250µA. The device also has a maximum gate charge of 20nC typical. The pulsed drain current is -40A. The avalanche energy is 31mJ. The device is designed for high-performance power switching and is commonly used in load switch and power management circuits where negative voltage control is needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The package is PPAK1212-8S.
-100V.
-23A at Tc=25°C.
59mOhm at Vgs=10V, Id=5A.
2.5V maximum at 250µA.
20nC typical at Vgs=-4.5V.
31mJ single pulse.