| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SISS65DN-T1-GE3 is a P-Channel power MOSFET designed for various applications including adapter and charger switches, load switches, motor drive control, DC/DC converters, power supplies, and battery management.
This MOSFET features a 30V drain-source voltage and a continuous drain current rating of up to 94A at 25°C case temperature. Its low on-resistance is specified at 4.6mOhm maximum at 15A drain current and 10V gate-source voltage, and 7.5mOhm maximum at 15A drain current and 4.5V gate-source voltage. The typical gate charge is 44nC at 10V gate-source voltage.
Packaged in the PowerPAK® 1212-8S surface-mount package, the SISS65DN-T1-GE3 operates within a junction temperature range of -55°C to +150°C. It boasts high thermal performance with a maximum junction-to-case thermal resistance of 1.9°C/W.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 2.3V maximum at 250µA. The device is also tested for 100% Rg and UIS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is -30V.
The continuous drain current is -94A at case temperature 25°C and -25.9A at ambient temperature 25°C.
The maximum on-resistance is 4.6mΩ at VGS=-10V and 7.5mΩ at VGS=-4.5V.
The maximum gate threshold voltage is 2.3V at a drain current of 250µA.
It is supplied in a PowerPAK 1212-8S surface-mount package.
The operating junction and storage temperature range is -55°C to 150°C.
Maximum power dissipation is 65.8W at case temperature 25°C and 5.1W at ambient temperature 25°C.