SISS63DN-T1-GE3 The Vishay Dale SISS63DN-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 127.5A at 25°C case temperature. It features a low Rds On of 2.7mOhm at 15A and 10V.
Mfr Part #:

SISS63DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISS63DN-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 127.5A at 25°C case temperature. It features a low Rds On of 2.7mOhm at 15A and 10V.
✓ Total Stock: 7,000 pcs
$ Price Range: $0.99

SISS63DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SISS63DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISS63DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISS63DN-T1-GE3 is a P-Channel TrenchFET Gen III power MOSFET designed for applications such as battery management and load switching. It offers a drain-source voltage of 20V and a maximum continuous drain current of 127.5A (Tc=25°C) or 35.1A (Ta=25°C).

 

Key electrical characteristics include a low on-resistance of 2.7mOhm at 15A and 10V, and a gate threshold voltage of 1.5V at 250µA. The MOSFET has a typical gate charge of 72.2 nC and an input capacitance of 7080 pF.

 

This device is housed in a compact and thermally enhanced PowerPAK 1212-8S package, suitable for surface mounting. It operates across a wide temperature range of -55°C to +150°C (TJ). The MOSFET is tested 100% for Rg and UIS, and is available in lead (Pb)-free and halogen-free configurations.

SISS63DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20V MOSFET
Subcategory: P-Channel

SISS63DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SISS63DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISS63DN-T1-GE3 Features

  • P-Channel TrenchFET Gen III power MOSFET.
  • Low Rds On of 2.7mOhm at 15A, 10V.
  • High continuous drain current capability.
  • Compact PowerPAK 1212-8S package.
  • Lead (Pb)-free and halogen-free.

SISS63DN-T1-GE3 Applications

  • Ideal for battery management circuits.
  • Used in load switch applications.
  • Suitable for high-side power switching.

SISS63DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SISS63DN-T1-GE3?

The drain-source voltage is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 127.5A when measured at the case temperature of 25°C, and 35.1A when measured at an ambient temperature of 25°C.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 2.7mOhm at a drain current of 15A and gate-source voltage of 10V.

What package type is the SISS63DN-T1-GE3 in?

It is in the PowerPAK 1212-8S package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

Is this product RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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