| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SISS52DN-T1-GE3 is an N-Channel Power MOSFET designed for high-density power applications. It features a 30V drain-source voltage and a very low RDS(on) figure-of-merit, enabling efficient power conversion.
Key electrical specifications include a maximum continuous drain current of 162A at TC=25°C and 47.1A at TA=25°C. The RDS(on) is as low as 1.2mΩ at VGS=10V. The device operates over a temperature range of -55°C to 150°C.
This MOSFET utilizes TrenchFET® Gen V technology and is packaged in the thermally enhanced PowerPAK® 1212-8S package, suitable for surface mounting. Its design is optimized for applications such as DC/DC converters, POL, synchronous rectification, battery management, and power load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The typical gate charge is 19.9 nC at Vgs = 10 V.
The maximum continuous drain current is 162 A at TC = 25 °C.
The operating temperature range is -55°C to 150°C (TJ).
The SISS52DN-T1-GE3 MOSFET is supplied in a PowerPAK® 1212-8SH package.