SISS46DN-T1-GE3 The Vishay Dale SISS46DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage rating. It features a low Rds(on) of 12.8mOhm at 10A, 10V and a continuous drain current of 45.3A.
Mfr Part #:

SISS46DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISS46DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage rating. It features a low Rds(on) of 12.8mOhm at 10A, 10V and a continuous drain current of 45.3A.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SISS46DN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 20+ On Request On Request

SISS46DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISS46DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISS46DN-T1-GE3 is a single N-Channel MOSFET designed for various power switching applications. It offers a high drain-source voltage of 100V and a significant continuous drain current capability of 45.3A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 12.8mOhm at a gate-source voltage of 10V and a drain current of 10A. The gate charge (Qg) is typically 21.5nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a PowerPAK 1212-8S surface-mount package. Its TrenchFET Gen IV technology provides a very low RDS(on)-Qg figure-of-merit, making it suitable for applications requiring high efficiency and performance. The component is tested 100% for Rg and UIS.

 

Applications include synchronous rectification, DC/DC converters, primary side switching, solar micro-inverters, motor drive switches, and battery/load switches in industrial settings.

SISS46DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiSS46DN-T1-GE3 N-Channel 100V Power MOSFET
Subcategory: N-Channel

SISS46DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SISS46DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISS46DN-T1-GE3 Features

  • N-Channel 100V Power MOSFET
  • Low Rds(on) of 12.8mOhm at 10A, 10V
  • High continuous drain current of 45.3A
  • Surface mount PowerPAK 1212-8S package
  • TrenchFET Gen IV technology for efficiency

SISS46DN-T1-GE3 Applications

  • Ideal for synchronous rectification
  • Suitable for DC/DC converters
  • Used as primary side switch
  • Applicable to solar micro-inverters
  • Designed for motor drive switches

SISS46DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SISS46DN-T1-GE3?

The maximum drain-source voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 45.3A at 25°C case temperature and 12.5A at 25°C ambient temperature.

What is the Rds(on) of the SISS46DN-T1-GE3?

The Rds(on) is a maximum of 12.8mOhm at 10A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is the SISS46DN-T1-GE3 in?

It is in the PowerPAK 1212-8S package.

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