SISS32LDN-T1-GE3 The Vishay Dale SISS32LDN-T1-GE3 is an N-Channel MOSFET with an 80V drain-source voltage rating. It features a low on-resistance and is housed in a surface-mount PowerPAK® 1212-8SH package.
Mfr Part #:

SISS32LDN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISS32LDN-T1-GE3 is an N-Channel MOSFET with an 80V drain-source voltage rating. It features a low on-resistance and is housed in a surface-mount PowerPAK® 1212-8SH package.
✓ Total Stock: 58,020 pcs
$ Price Range: $0.99

SISS32LDN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
58,020 pcs
58020 pcs On Request 1 On Request On Request On Request On Request On Request

SISS32LDN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISS32LDN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISS32LDN-T1-GE3 is a high-performance N-Channel MOSFET designed for various power applications. It boasts a maximum drain-source voltage of 80V and a continuous drain current capability of up to 63A at 25°C case temperature.

 

Key electrical characteristics include a low maximum on-resistance of 7.2mOhm at 15A and 10Vgs, and a typical gate charge of 17.7nC. The MOSFET operates within a junction temperature range of -55°C to 150°C.

 

This component is packaged in a compact PowerPAK® 1212-8SH, suitable for surface mounting. Its features make it suitable for applications such as synchronous rectification, DC/DC converters, and motor drive switching.

SISS32LDN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiSS32LDN-T1-GE3 N-Channel 80 V Power MOSFET
Subcategory: Power MOSFET

SISS32LDN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SISS32LDN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISS32LDN-T1-GE3 Features

  • N-Channel 80V Power MOSFET
  • Low Rds(on) of 7.2mOhm at 10Vgs
  • High continuous drain current of 63A
  • Surface mount PowerPAK® 1212-8SH package
  • Wide operating temperature range

SISS32LDN-T1-GE3 Applications

  • Synchronous rectification applications
  • DC/DC converter circuits
  • Motor drive switching
  • Industrial power systems
  • Battery load switching

SISS32LDN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SISS32LDN-T1-GE3?

80 V.

What is the maximum gate-to-source voltage?

±20V.

What package does the SISS32LDN-T1-GE3 use?

Surface-mount PowerPAK 1212-8SH.

What is the operating junction temperature range?

-55°C to +150°C.

What is the continuous drain current rating?

63A at case temperature 25°C, 50.3A at case temperature 70°C, 17.4A at ambient 25°C, and 13.9A at ambient 70°C.

What is the on-resistance at 10V gate drive?

7.2mΩ maximum.

What is the input capacitance?

2550pF at VDS=40V.

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