| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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58,020 pcs
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58020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SISS32LDN-T1-GE3 is a high-performance N-Channel MOSFET designed for various power applications. It boasts a maximum drain-source voltage of 80V and a continuous drain current capability of up to 63A at 25°C case temperature.
Key electrical characteristics include a low maximum on-resistance of 7.2mOhm at 15A and 10Vgs, and a typical gate charge of 17.7nC. The MOSFET operates within a junction temperature range of -55°C to 150°C.
This component is packaged in a compact PowerPAK® 1212-8SH, suitable for surface mounting. Its features make it suitable for applications such as synchronous rectification, DC/DC converters, and motor drive switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
±20V.
Surface-mount PowerPAK 1212-8SH.
-55°C to +150°C.
63A at case temperature 25°C, 50.3A at case temperature 70°C, 17.4A at ambient 25°C, and 13.9A at ambient 70°C.
7.2mΩ maximum.
2550pF at VDS=40V.