| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,020 pcs
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25020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SISS30DN-T1-GE3 is an N-Channel MOSFET designed for various applications including synchronous rectification and DC/DC converters. It features a TrenchFET Gen IV power MOSFET design, offering very low RDS-Qg figure-of-merit.
Key electrical specifications include a maximum drain-source voltage of 80V and a maximum Rds On of 8.25mOhm at 10A and 10V. The continuous drain current is rated at 54.7A under Tc=25°C and 15.9A under Ta=25°C. The gate charge (Qg) is typically 19.6 nC at 10V.
This MOSFET is housed in a PowerPAK 1212-8S surface-mount package. It operates within a temperature range of -55°C to +150°C (TJ). The device is 100% Rg and UIS tested, ensuring reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80 V.
The Rds On (Max) is 8.25mOhm at 10A and 10V.
The continuous drain current is 54.7A at Tc=25°C and 15.9A at Ta=25°C.
The operating junction and storage temperature range is -55°C to +150°C.
It is in a PowerPAK® 1212-8S surface mount package.