| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,657 pcs
|
51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
359 pcs
|
359 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SISS27DN-T1-GE3 is a P-Channel TrenchFET® Power MOSFET with a 30V drain-source voltage rating. It is designed for applications such as notebook computers and mobile computing, including adaptor switches, load switches, DC/DC converters, and power management.
Key electrical characteristics include a maximum continuous drain current of 50A at 25°C case temperature and a low on-resistance of 5.6mΩ at 15A and 10V Vgs. The device features a gate charge of 45 nC typical and a gate-source voltage range of ±20V.
This MOSFET is housed in a compact PowerPAK® 1212-8S package, suitable for surface mounting. It operates within a temperature range of -50°C to 150°C (TJ) and has a maximum power dissipation of 57W at 25°C case temperature.
The SiSS27DN-T1-GE3 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The continuous drain current is 50A at 25°C case temperature.
The Rds(on) is 5.6mΩ at 15A drain current and 10V gate-source voltage.
The MOSFET is supplied in a PowerPAK® 1212-8S package.
The operating junction and storage temperature range is -50°C to 150°C.