SISS27ADN-T1-GE3 The Vishay Dale SISS27ADN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating. It features a low RDS(on) and is housed in a surface-mount PowerPAK 1212-8S package.
Mfr Part #:

SISS27ADN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISS27ADN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating. It features a low RDS(on) and is housed in a surface-mount PowerPAK 1212-8S package.
✓ Total Stock: 34,073 pcs
$ Price Range: $0.99

SISS27ADN-T1-GE3 Available from 3 distributors

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30,000 pcs
30000 pcs On Request 1 On Request On Request 19+20+ On Request On Request
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2,270 pcs
2270 pcs On Request 1 On Request On Request On Request On Request On Request
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1,803 pcs
1803 pcs On Request 1 On Request On Request On Request On Request On Request

SISS27ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISS27ADN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiSS27ADN-T1-GE3 is a P-Channel power MOSFET designed for various applications including battery management and load switching. It features TrenchFET Gen III technology, offering low thermal resistance in a compact PowerPAK 1212-8S package with a low profile of 0.75 mm.

 

Key electrical characteristics include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 50A at 25°C case temperature. The on-resistance (RDS(on)) is as low as 5.1mOhm at a gate-source voltage (Vgs) of 10V. The device is tested 100% for Rg and UIS.

 

This MOSFET is suitable for applications requiring efficient power switching. Its surface-mount design and small footprint make it ideal for space-constrained mobile devices and adapter circuits. The operating temperature range is -55°C to 150°C.

SISS27ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiSS27ADN-T1-GE3 P-Channel 30V TrenchFET Gen III Power MOSFET
Subcategory: P-Channel

SISS27ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SISS27ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISS27ADN-T1-GE3 Features

  • P-Channel 30V TrenchFET Gen III power MOSFET.
  • Low thermal resistance PowerPAK 1212-8S package.
  • Continuous drain current up to 50A.
  • Low on-resistance: 5.1mOhm at 10V Vgs.
  • Suitable for battery management applications.

SISS27ADN-T1-GE3 Applications

  • Used in battery management systems.
  • Ideal for adapter and charger switches.
  • Functions as a battery switch.
  • Suitable for load switching circuits.

SISS27ADN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SISS27ADN-T1-GE3 MOSFET?

The drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current for the SISS27ADN-T1-GE3?

The maximum continuous drain current is 50A at 25°C case temperature.

What is the on-resistance (RDS(on)) of the SISS27ADN-T1-GE3 at 10V gate-source voltage?

The RDS(on) is a maximum of 5.1mOhm at 15A drain current and 10V gate-source voltage.

What type of package is the SISS27ADN-T1-GE3 MOSFET in?

It is in a PowerPAK 1212-8S package.

What is the operating temperature range for the SISS27ADN-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

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