SISS23DN-T1-GE3 The Vishay Dale SISS23DN-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 50A continuous drain current. It is housed in a surface-mount PowerPAK 1212-8S package.
Mfr Part #:

SISS23DN-T1-GE3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISS23DN-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 50A continuous drain current. It is housed in a surface-mount PowerPAK 1212-8S package.
✓ Total Stock: 11,817 pcs
$ Price Range: $0.99

SISS23DN-T1-GE3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SISS23DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISS23DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiSS23DN-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 50A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 4.5mOhm at a gate-source voltage of -4.5V and a drain current of 20A. The device has a maximum gate-source voltage of ±8V and a gate charge of 300nC at 10V.

 

This MOSFET is packaged in a compact PowerPAK 1212-8S surface-mount package, measuring 3.3mm x 3.3mm with a low profile of 0.75mm. It operates within a temperature range of -50°C to 150°C.

 

Applications include battery switches, load switches, and power management in mobile computing devices like smartphones and tablet PCs.

SISS23DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20 V (D-S) MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SISS23DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SISS23DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISS23DN-T1-GE3 Features

  • P-Channel 20V MOSFET.
  • 50A continuous drain current.
  • Low Rds On at 4.5V Vgs.
  • Compact PowerPAK 1212-8S package.
  • Suitable for power management.

SISS23DN-T1-GE3 Applications

  • Ideal for DC-DC converter output stages.
  • Used in motor driver bridge configurations.
  • Suitable for battery protection circuit designs.
  • Applied in automotive power distribution modules.
  • Designed for industrial load switching systems.

SISS23DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SISS23DN-T1-GE3?

The maximum drain-source voltage is 20V.

What is the continuous drain current of the SISS23DN-T1-GE3?

The continuous drain current is 50A at 25°C case temperature and 27A at 25°C ambient temperature.

What is the Rds On for the SISS23DN-T1-GE3?

The Rds On is a maximum of 4.5mOhm at 20A and 4.5V Vgs.

What is the operating temperature range for the SISS23DN-T1-GE3?

The operating temperature range is -50°C to 150°C.

What package type is the SISS23DN-T1-GE3 in?

The SISS23DN-T1-GE3 is in a PowerPAK 1212-8S package.

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