| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SISS22LDN-T1-GE3 is a single N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 92.5A at 25°C case temperature.
The MOSFET exhibits a maximum on-resistance (Rds(on)) of 3.65mOhm at 15A and 10V gate-source voltage. Key electrical parameters include a gate-source voltage range of ±20V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The input capacitance (Ciss) is 2540pF at 30V, and the typical gate charge (Qg) is 17.4nC at 10V.
With a maximum power dissipation of 65.7W at 25°C case temperature, this device is suitable for demanding applications. It operates within a junction temperature range of -55°C to +150°C. The component is packaged in a PowerPAK® 1212-8S case and is designed for surface mounting.
Applications include synchronous rectification, primary side switching, DC/DC converters, motor drive switches, and battery/load switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
It comes in a PowerPAK 1212-8S surface mount package.
The operating junction temperature range is -55°C to 150°C.
92.5A at 25°C case temperature.
3.65mOhm maximum at 15A and 10V.
2.5V maximum at 250µA drain current.
17.4nC typical.