| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiSS12DN-T1-GE3 is an N-Channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a maximum continuous drain current of 60A (Tc). The device utilizes TrenchFET Gen IV technology for low on-resistance and optimized switching performance.
Key electrical characteristics include a low R DS(on) of 1.98 mOhm at 10A and 10V, and a typical gate charge of 28.7 nC. The MOSFET operates over a wide temperature range from -55°C to +150°C.
Packaged in the compact and thermally enhanced PowerPAK 1212-8S, this surface-mount MOSFET is suitable for applications such as synchronous rectification, synchronous buck converters, and high power density DC/DC converters. Its optimized design helps reduce switching-related power loss.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 40 V.
The device is packaged in a PowerPAK 1212-8S surface mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical gate charge is 28.7 nC.
The maximum on-resistance is 1.98 mΩ at 10V and 10A.
The maximum gate threshold voltage (Vgs(th)) is 2.4 V at 250 µA drain current.
The maximum power dissipation is 65.7 W at TC = 25°C.