| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
127,020 pcs
|
127020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SISS10DN-T1-GE3 from Vishay Dale is a TrenchFET Gen IV power MOSFET with an N-Channel configuration. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 60A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 2.65mOhm at 15A and 10V Vgs, and 3.6mOhm at 60A and 4.5V Vgs, optimizing switching performance and reducing power loss.
This device is housed in a PowerPAK® 1212-8S surface-mount package, suitable for high power density DC/DC converters, VRMs, synchronous rectification, and battery management systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 57W at 25°C case temperature.
The MOSFET is 100% Rg and UIS tested, indicating robust performance and reliability. Its optimized gate charge characteristics further contribute to reduced switching-related power loss, making it an efficient choice for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
60A at a case temperature of 25°C.
Maximum 2.65 mOhm at Vgs=10V and Id=15A.
-55°C to 150°C junction temperature.
PowerPAK 1212-8S surface mount package.
75 nC at Vgs=10V.